| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high electron mobility transistor capable of relaxing electric field concentration on a drain-side end of a gate section. <P>SOLUTION: A high electron mobility transistor 10 includes a conductor section 23, a first resistor R1, and a second resistor R2. The conductor section 23 is provided between a drain electrode 21 and a gate section 26. One end of the first resistor R1 is electrically connected with the drain electrode 21 and the other end thereof is electrically connected with the conductor section 23. One end of the second resistor R2 is electrically connected with a source electrode 28 and the other end thereof is electrically connected with the conductor section 23. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
