| 摘要 |
<p>The present invention is related to a method for the production of isolated through hole connects in a substrate comprising the steps of: A) providing a substrate (1), B) dry etching the substrate (1), forming at least one substrate hole (2), C) depositing a layer of conducting material (15) on the bottom and on the sidewalls of the substrate hole (2) and possibly on top of the rest of said substrate's surface, thereby transforming the substrate hole (2) into a conductor hole, D) depositing a positive working photo resist (22), E) opening said photo resist (22) at the bottom (23) of said conductor hole, F) bottom-up electroplating a Cu-post (24), G) stripping the photo-resist (22), H) stripping the layer of conducting material (15), I) depositing a layer of planarising dielectric material (25), filling the gap between the conductor hole and said Cu-post, J) depositing and patterning a metal interconnect pattern, K) depositing a second layer (27) of a second dielectric material, L) Mechanical back grinding the substrate, such that it is 10 to 50 micrometer thicker than the actual Cu-post, M) Plasma etching the substrate on the backside, stopping on the Cu-post, N) Solder ball (8) attachment to the Cu-post. <IMAGE></p> |
