发明名称 Substrate processing apparatus and manufacturing method for a semiconductor device
摘要 The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamber 41 and a transfer chamber 24 respectively provided in order from the rear side within a case 11; and a processing chamber 53 provided above the load lock chamber 41 for processing wafers 1. An opening section 27A, and an opening and closing means 28A for opening and closing the opening section 27A are respectively provided in a location at the rear side of the transfer chamber 24 where the load lock chamber 41 is not arranged.
申请公布号 US9111972(B2) 申请公布日期 2015.08.18
申请号 US200510593282 申请日期 2005.06.27
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 Takeshita Mitsunori;Matsuda Tomoyuki;Hirano Mitsuhiro;Sato Akihiro;Morita Shinya;Miyata Toshimitsu;Shibata Koji
分类号 C23C16/44;H01L21/469;H01L21/673;H01L21/677;C23C16/54;H01L21/67 主分类号 C23C16/44
代理机构 Kratz, Quintos & Hanson, LLP 代理人 Kratz, Quintos & Hanson, LLP
主权项 1. A substrate processing apparatus comprising a load lock chamber, a transfer chamber and a maintenance passage provided in order along a length direction from the rear side within a case having a maintenance opening for entry of maintenance personnel into the maintenance passage from outside the case, and a processing chamber provided above the load lock chamber for processing a substrate, wherein an opening section, arranged in a wall isolating the maintenance passage from the transfer chamber to form an air-tight seal, for entry of maintenance personnel into the transfer chamber from the maintenance passage of the case, and a door for opening and closing the opening section are provided in a location along the length direction at a front side of the transfer chamber.
地址 Tokyo JP