发明名称 Three-dimensional semiconductor architecture
摘要 A system and method for making semiconductor die connections with through-substrate vias are disclosed. Through substrate vias are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment the substrate has an interior region and a periphery region surrounding the interior region. A first set of through substrate vias are located within the periphery region, and a second set of through substrate vias are located within the interior region, wherein the second set of through substrate vias are part of a power matrix. The second set of through substrate vias bisect the substrate into a first part and a second part.
申请公布号 US9111936(B2) 申请公布日期 2015.08.18
申请号 US201414290687 申请日期 2014.05.29
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Law Oscar M. K.;Wu Kuo H.
分类号 H01L23/528;H01L23/48;H01L23/525;H01L23/00;H01L25/065;H01L21/768;H01L23/498;H01L21/822;H01L27/06;H01L27/12 主分类号 H01L23/528
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A semiconductor device comprising: a substrate with a first side and a second side, the substrate comprising an interior region and a periphery region surrounding the interior region; first active devices on the first side of the substrate, at least one of the first active devices being located at least partially within the substrate; a first set of through substrate vias located within the periphery region and extending from the first side of the substrate to the second side of the substrate; and a second set of through substrate vias located within the interior region and extending from the first side of the substrate to the second side of the substrate, wherein the second set of through substrate vias are part of a power matrix, the second set of through substrate vias bisecting the substrate into a first part and a second part.
地址 Hsin-Chu TW