发明名称 |
Fan out package, semiconductor device and manufacturing method thereof |
摘要 |
A fan out package includes a molding compound, a conductive plug in the molding compound, a dielectric covering the molding compound and a portion of the conductive plug, and an interconnect disposed over the dielectric and contacted with the conductive plug, wherein a width of the interconnect contacting the conductive plug is substantially smaller than a width of the conductive plug in the molding compound, and a width of the interconnect disposed over the dielectric is substantially greater than the width of the conductive plug in the molding compound. |
申请公布号 |
US9111914(B2) |
申请公布日期 |
2015.08.18 |
申请号 |
US201414579345 |
申请日期 |
2014.12.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
Lin Jing-Cheng;Hung Jui-Pin;Tsai Po-Hao |
分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L21/768;H01L23/528 |
主分类号 |
H01L23/48 |
代理机构 |
WPAT, P.C. |
代理人 |
WPAT, P.C. ;King Anthony;Yang Kay |
主权项 |
1. A fan out package, comprising:
a molding compound including a first portion and a second portion; a conductive plug interposed between the first portion of the molding compound and the second portion of the molding compound; a dielectric covering the molding compound and a portion of the conductive plug; and an interconnect disposed over the dielectric and contacted with the conductive plug, wherein the interconnect includes a first portion overlaid the first portion of the molding compound, a second portion overlaid the second portion of the molding compound and a third portion contacting the conductive plug, and a width of the third portion of the interconnect is substantially smaller than a width of the conductive plug in the molding compound, and a width of the first portion of the interconnect and the second portion of the interconnect is substantially greater than the width of the conductive plug in the molding compound. |
地址 |
Hsinchu TW |