发明名称 Microelectronic packages containing stacked microelectronic devices and methods for the fabrication thereof
摘要 Microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the method includes encapsulating a device stack within a molded panel having a frontside and a backside. The device stack contains an upper semiconductor die and an interconnect buffer layer, which is formed over the upper semiconductor die and which is covered by the frontside of the molded panel. Material is removed from the frontside the molded panel to expose the interconnect buffer layer therethrough. One or more frontside redistribution layers are produced over the frontside of the molded panel and electrically coupled to the upper semiconductor die through the interconnect buffer layer. The molded panel is then singulated to yield a microelectronic package including a molded package body containing the device stack.
申请公布号 US9111870(B2) 申请公布日期 2015.08.18
申请号 US201314056844 申请日期 2013.10.17
申请人 FREESCALE SEMICONDUCTOR INC. 发明人 Vincent Michael B.
分类号 H01L21/78;H01L23/28;H01L23/00;H01L23/538 主分类号 H01L21/78
代理机构 Ingrassia Fisher & Lorenz, P.C. 代理人 Ingrassia Fisher & Lorenz, P.C.
主权项 1. A method for fabricating a microelectronic package, comprising: encapsulating a device stack within a molded panel having a frontside and a backside, the device stack comprising: an upper semiconductor die;an interconnect buffer layer formed over the upper semiconductor die and covered by the frontside of the molded panel; andan inner molded body surrounding the upper semiconductor die and underlying the interconnect buffer layer; removing material from the frontside the molded panel to expose the interconnect buffer layer therethrough; producing one or more frontside redistribution layers over the frontside of the molded panel and electrically coupled to the upper semiconductor die through the interconnect buffer layer; and singulating the molded panel to yield a microelectronic package including a molded package body containing the device stack and surrounding the inner molded body and the interconnect buffer layer.
地址 Austin TX US
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