发明名称 Semiconductor device and method for driving the same
摘要 An image sensor is provided which is capable of holding data for one frame period or longer and conducting a difference operation with a small number of elements. A photosensor is provided in each of a plurality of pixels arranged in a matrix, each pixel accumulates electric charge in a data holding portion for one frame period or longer, and an output of the photosensor changes in accordance with the electric charge accumulated in the data holding portion. As a writing switch element for the data holding portion, a transistor with small leakage current (sufficiently smaller than 1×10−14 A) is used. As an example of the transistor with small leakage current, there is a transistor having a channel formed in an oxide semiconductor layer.
申请公布号 US9111824(B2) 申请公布日期 2015.08.18
申请号 US201414464934 申请日期 2014.08.21
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Ikeda Takayuki
分类号 G06F3/038;G09G5/00;H01L27/146;H01L29/22;H01L29/24;H01L29/786 主分类号 G06F3/038
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A semiconductor device comprising: a photodiode comprising a first electrode and a second electrode; a first capacitor comprising a first electrode and a second electrode; a first transistor comprising a source and a drain; a second transistor comprising a gate, a source and a drain; a third transistor comprising a source and a drain, and a wiring, wherein one of the first electrode and the second electrode of the photodiode is electrically connected to the wiring, wherein one of the first electrode and the second electrode of the first capacitor is electrically connected to the other of the first electrode and the second electrode of the photodiode, wherein the other of the first electrode and the second electrode of the first capacitor is electrically connected to one of the source and the drain of the first transistor, and the gate of the second transistor, and wherein one of the source and the drain of the second transistor is electrically connected to one of the source and the drain of the third transistor.
地址 Atsugi-shi, Kanagawa-ken JP