发明名称 |
Floating body memory cell system and method of manufacture |
摘要 |
A plurality of integrated circuit features are provided in the context of an array of memory cells including a plurality of word lines and a plurality of bit lines. Each memory cell includes a floating body or is volatile memory. The aforementioned features may include, among others, an option whereby the foregoing bit lines may be situated below a channel region of corresponding memory cells, etc. |
申请公布号 |
US9111800(B2) |
申请公布日期 |
2015.08.18 |
申请号 |
US201012888020 |
申请日期 |
2010.09.22 |
申请人 |
SanDisk 3D LLC |
发明人 |
Scheuerlein Roy E. |
分类号 |
G11C11/404;H01L27/12;H01L21/84;H01L27/108;H01L29/78 |
主分类号 |
G11C11/404 |
代理机构 |
Dugan & Dugan, PC |
代理人 |
Dugan & Dugan, PC |
主权项 |
1. An integrated circuit, comprising:
an array of memory cells including a plurality of word lines and a plurality of bit lines, where each memory cell includes a writeable floating body and a polysilicon field conductor positioned below the writeable floating body and between a pair of the plurality of word lines or a pair of the plurality of bit lines; wherein the bit lines extend in a first direction that is different from a second direction in which the current flows through the floating body of corresponding memory cells. |
地址 |
Milpitas CA US |