Semiconductor device, fabrication method for a semiconductor device and electronic apparatus

摘要

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

主权项

1. A semiconductor device, comprising:
a first substrate having a bonding face to which a first electrode and a first insulating film are exposed; an insulating thin film configured to cover the bonding face of said first substrate; and a second substrate having a bonding face to which a second electrode and a second insulating film are exposed and bonded to said first substrate in a state in which said insulating thin film is sandwiched between the bonding face of said second substrate and the bonding face of said first substrate and said insulating thin film is sandwiched between the first electrode and the second electrode, wherein said first electrode and said second electrode are electrically connected to each other through said insulating thin film.