Multi component dielectric layer

摘要

An in-situ process is described incorporating plasma enhanced chemical vapor deposition comprising flowing at least one of a Si, Si+C, B, Si+B, Si═B+C, and B+C containing precursor, and a N containing precursors at first times and removing the N precursor at second times and starting the flow of an oxidant gas and a porogen gas into the chamber. A dielectric layer is described comprising a network having inorganic random three dimensional covalent bonding throughout the network which contains at least one SiCN, SiCNH, SiN, SiNH, BN, BNH, CBN, CBNH, BSiN, BSiNH, SiCBN and SiCBNH as a first component and a low k dielectric as a second component adjacent thereto.

主权项

1. A dielectric structure comprising:
a first component comprising at least one of SiCN, SiCNH, SiN, SiNH, BN, BNH, CBN, CBNH, BSiN, BSiNH, SiCBN and SiCBNH and a second component separated from said first component by a transition region wherein said second component has a dielectric constant less than 3.2, said a transition region in contact with said first and second components and comprises substantially one or more atoms of Si, C, N, O and H wherein the concentration of C decreases and O increases in said transition as a function of distance from said first component to said second component.