Integrated circuits with protected resistors and methods for fabricating the same

摘要

Methods and apparatus are provided for an integrated circuit with a transistor and a resistor. The method includes depositing a first dielectric layer over the transistor and the resistor, followed by an amorphous silicon layer. The amorphous silicon layer is implanted over the resistor to produce an etch mask, and the amorphous silicon layer and first dielectric layer are removed over the transistor. A contact location on the transistor is then silicided.

主权项

1. A method of producing an integrated circuit comprising:
depositing a first dielectric layer over a resistor and a transistor of the integrated circuit; depositing an amorphous silicon layer over the first dielectric layer; implanting the amorphous silicon layer over the resistor to create an etch mask; removing the amorphous silicon layer and the first dielectric layer overlying the transistor while leaving the etch mask over the resistor; and siliciding a contact location on the transistor.