| 发明名称 | Thin film capacitor | ||
| 摘要 | A thin film capacitor includes a lower electrode layer, a dielectric layer that is provided on said lower electrode layer, and an upper electrode layer that is formed on the dielectric layer. Wherein, the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer. | ||
| 申请公布号 | US9111681(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201313923585 | 申请日期 | 2013.06.21 |
| 申请人 | TDK Corporation | 发明人 | Saita Hitoshi;Yano Yoshihiko;Oikawa Yasunobu |
| 分类号 | H01G4/008;H01G4/01;H01G4/33;H01L49/02 | 主分类号 | H01G4/008 |
| 代理机构 | Posz Law Group, PLC | 代理人 | Posz Law Group, PLC |
| 主权项 | 1. A thin film capacitor, comprising: a lower electrode layer; a dielectric layer that is provided on said lower electrode layer; and an upper electrode layer that is formed on the dielectric layer;wherein the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer. | ||
| 地址 | Tokyo JP | ||