MRAM smart bit write algorithm with error correction parity bits

摘要

Some aspects of the present disclosure relate a method. The method attempts to write an expected multi-bit word to a memory location in memory. After writing of the multi-bit word has been attempted, an actual multi-bit word is read from the memory location. The actual multi-bit word is then compared with the expected multi-bit word to identify a number of erroneous bits and a number of correct bits stored in the memory location. The number of erroneous bits is re-written to the memory location without attempting to re-write the correct bits to the memory location.

主权项

1. A method, comprising:
attempting to write an expected multi-bit word to a memory location in a magnetic random access memory (MRAM); after attempting to write the multi-bit word, reading an actual multi-bit word from the memory location; logically comparing the actual multi-bit word with the expected multi-bit word to identify a number of erroneous bits and a number of correct bits stored in the memory location; based on a result of the logical comparison, attempting to selectively re-write the number of erroneous bits to the memory location without attempting to re-write the number of correct bits to the memory location.