METHOD FOR ETCHING USING METAL LAYER AS ETCHING RESIST

摘要

An etching method using a metal layer as an etching resist comprises: a step of forming a lower metal layer consisting of a conductive material on an upper surface of an insulator layer consisting of an organic insulator or an inorganic insulator, and an upper metal layer on a top thereof; a step of forming a photosensitive material on an upper surface of the upper metal layer, forming an opening pattern to open a specific part of the photosensitive material; a step of forming a circuit pattern by selectively etching the upper metal layer as a first etchant to etch the upper metal layer passing through the photosensitive material having the opening pattern; a step of removing the photosensitive material using chemicals; and a step of forming the circuit pattern by selectively etching a lower metal layer as a second etchant to etch the lower metal layer passing through the upper metal layer having the circuit pattern.