Methods of containing defects for non-silicon device engineering

摘要

An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor. A system including a computer including a processor including complimentary metal oxide semiconductor circuitry including an n-type transistor including a channel material, the channel material having a first lattice structure on a well disposed in a buffer material having a second lattice structure that is different than the first lattice structure, the n-type transistor coupled to a p-type transistor.

主权项

1. An apparatus comprising:
a semiconductor device comprising a channel material having a first lattice structure on a well of a well material having a matched lattice structure, the well disposed in a buffer material having a second lattice structure that is different than the first lattice structure, wherein the well comprises dimensions of a height greater than each of a width and a length.