发明名称 |
Barrier layer for copper interconnect |
摘要 |
A copper interconnect includes a copper layer formed in a dielectric layer. A glue layer is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the glue layer and the dielectric layer. The barrier layer is a metal oxide. |
申请公布号 |
US9112004(B2) |
申请公布日期 |
2015.08.18 |
申请号 |
US201314132651 |
申请日期 |
2013.12.18 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Kao Chih-Kuang;Yang Huei-Wen;Huang Yung-Sheng;Lin Yu-Wen |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method comprising:
etching a dielectric layer to form an opening; depositing a glue layer to a bottom and sidewalls of the opening, wherein the glue layer comprises a metal alloy; depositing a seed layer over the glue layer; after the depositing the seed layer, filling the opening with a metallic material; and performing a thermal treatment to cause a metal in the seed layer to diffuse through the glue layer, wherein the metal reacts with the dielectric layer to form a barrier layer. |
地址 |
Hsin-Chu TW |