发明名称 Barrier layer for copper interconnect
摘要 A copper interconnect includes a copper layer formed in a dielectric layer. A glue layer is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the glue layer and the dielectric layer. The barrier layer is a metal oxide.
申请公布号 US9112004(B2) 申请公布日期 2015.08.18
申请号 US201314132651 申请日期 2013.12.18
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Kao Chih-Kuang;Yang Huei-Wen;Huang Yung-Sheng;Lin Yu-Wen
分类号 H01L21/768;H01L23/532 主分类号 H01L21/768
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method comprising: etching a dielectric layer to form an opening; depositing a glue layer to a bottom and sidewalls of the opening, wherein the glue layer comprises a metal alloy; depositing a seed layer over the glue layer; after the depositing the seed layer, filling the opening with a metallic material; and performing a thermal treatment to cause a metal in the seed layer to diffuse through the glue layer, wherein the metal reacts with the dielectric layer to form a barrier layer.
地址 Hsin-Chu TW