SOI substrate and method for manufacturing SOI substrate

摘要

An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a first single crystal silicon substrate to form a second single crystal silicon substrate which has a chip size; a step (B) of forming an insulating layer on one surface of the second single crystal silicon substrate, and forming an embrittlement layer in the second single crystal substrate; and a step (C) of bonding a substrate having an insulating surface and the second single crystal silicon substrate with the insulating layer therebetween, and conducting heat treatment to separate the second single crystal silicon substrate along the embrittlement layer, and forming a single crystal silicon thin film on the substrate having an insulating surface, are conducted.

主权项

1. A manufacturing method of an SOI substrate, comprising the steps of:
forming an insulating layer on one surface of a first single crystal silicon substrate; forming an embrittlement layer in the first single crystal silicon substrate; cutting the first single crystal silicon substrate to form a plurality of second single crystal silicon substrates each of which has a chip size after the step of forming the embrittlement layer; bonding a substrate having an insulating surface and the plurality of second single crystal silicon substrates with the insulating layer therebetween; separating the plurality of second single crystal silicon substrates along the embrittlement layer together by heat treatment; and forming a plurality of single crystal silicon thin films over the substrate having an insulating surface.