| 发明名称 | Method for improving anti-radiation performance of SOI structure | ||
| 摘要 | A method for improving anti-radiation performance of SOI structure that includes implementing particle implantations of high-energy neutrons, protons and γ-rays to a buried oxide layer of an SOI structure, and then performing annealing process. The high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure. | ||
| 申请公布号 | US9111995(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201214364984 | 申请日期 | 2012.10.25 |
| 申请人 | Institute of Microelectronics, Chinese Academy of Sciences | 发明人 | Lv Yinxue;Bi Jinshun;Luo Jiajun;Han Zhengsheng;Ye Tianchun |
| 分类号 | H01L21/762;H01L21/265;H01L21/324 | 主分类号 | H01L21/762 |
| 代理机构 | Osha Liang LLP | 代理人 | Osha Liang LLP |
| 主权项 | 1. A method for improving anti-radiation performance of an SOI structure comprising following steps: a) implementing high-energy particle implantation to a buried oxide layer of the SOI structure and then performing annealing process; wherein the high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure. | ||
| 地址 | Beijing CN | ||