Semiconductor devices with vertical channel transistors

摘要

Semiconductor devices with vertical channel transistors, the devices including semiconductor patterns disposed on a substrate, first gate patterns disposed between the semiconductor patterns on the substrate, a second gate pattern spaced apart from the first gate patterns by the semiconductor patterns, and conductive lines crossing the first gate patterns. The second gate pattern includes a first portion extending parallel to the first gate patterns and a second portion extending parallel to the conductive lines.

主权项

1. A semiconductor device, comprising:
a plurality of semiconductor patterns on a substrate; a plurality of first gate patterns between the semiconductor patterns; a plurality of conductive line crossing the first gate patterns; and a second gate pattern spaced apart from the first gate patterns by the semiconductor patterns, the second gate pattern including at least one first portion extending in parallel to the first gate patterns and at least one second portion extending in parallel to the conductive lines, wherein the first gate patterns cross over the conductive lines, the at least one first portion of the second gate pattern is on top of the at least one second portion, and the at least one first portion of the second gate pattern crosses the at least one second portion.