发明名称 Package having ESD and EMI preventing functions and fabrication method thereof
摘要 A package having ESD (electrostatic discharge) and EMI (electromagnetic interference) preventing functions includes: a substrate unit having a ground structure and an I/O structure disposed therein; at least a semiconductor component disposed on a surface of the substrate unit and electrically connected to the ground structure and the I/O structure; an encapsulant covering the surface of the substrate unit and the semiconductor component; and a metal layer disposed on exposed surfaces of the encapsulant and side surfaces of the substrate unit and electrically insulated from the ground structure, thereby protecting the semiconductor component against ESD and EMI so as to improve the product yield and reduce the risk of short circuits.
申请公布号 US9111945(B2) 申请公布日期 2015.08.18
申请号 US201112987613 申请日期 2011.01.10
申请人 Siliconware Precision Industries Co., Ltd. 发明人 Tsai Tsung-Hsien;Chiu Chih-Hsien;Chung Hsin-Lung;Lin Chien-Cheng
分类号 H01L23/552;H01L23/00 主分类号 H01L23/552
代理机构 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. 代理人 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. ;Corless Peter F.;Jensen Steven M.
主权项 1. A package having ESD (electrostatic discharge) and EMI (electromagnetic interference) preventing functions, comprising: a substrate unit having a first surface and a second surface opposite to the first surface, wherein the substrate unit has a ground structure and an I/O structure disposed therein; at least a semiconductor component disposed on the second surface of the substrate unit and electrically connected to the ground structure and the I/O structure of the substrate unit; an encapsulant covering the second surface of the substrate unit and the semiconductor component; a metal layer formed on exposed surfaces of the encapsulant and being in contact with side surfaces of the substrate unit without contacting the ground structure, wherein the entire metal layer is electrically insulated from the ground structure of the substrate unit by the substrate unit; and a plurality of conductive elements disposed on the first surface of the substrate unit for electrically connecting the metal layer, wherein the first surface of the substrate unit is formed with a plurality of first conductive pads and ESD protection pads and wherein the first conductive pads are electrically connected to the ground structure and the I/O structure, respectively.
地址 Taichung TW