Field-effect transistor comprising a leakage-current limiter

摘要

A field-effect transistor including at least one lower substrate having two electrodes deposited thereon, respectively a source electrode and a drain electrode, a dielectric layer made of a dielectric material, and a gate electrode deposited on the dielectric layer. It includes an intermediate layer, made of a material comprising molecules having a dipole moment complying with specific direction criteria, deposited between the gate electrode and the dielectric layer, said intermediate layer extending at least under the entire surface area taken up by the gate electrode, the intermediate layer being made of an organic compound comprising at least one binding function for the gate electrode.

主权项

1. A field-effect transistor comprising at least one lower substrate having two electrodes deposited thereon, respectively a source electrode and a drain electrode, a dielectric layer made of a dielectric material, and a gate electrode deposited on the dielectric layer,
wherein the field-effect transistor comprises an intermediate layer, made of a material comprising molecules having a dipole moment complying with specific direction criteria, deposited between the gate electrode and the dielectric layer, said intermediate layer extending at least under the entire surface area taken up by the gate electrode, wherein the intermediate layer is made of an organic compound comprising at least one binding function for the gate electrode, wherein the organic compound forming the intermediate layer further comprises a spacer formed of a linear, branched, or cyclic carbon chain and also capable of comprising at least one heteroatom; and wherein at least part of the molecules of the material forming the intermediate layer have a dipole moment directed towards the gate electrode when the transistor is of type N or at least part of the molecules of the material forming the intermediate layer have a dipole moment directed towards the dielectric layer when the transistor is of type P.