Semiconductor memory device

摘要

A semiconductor memory device according to an embodiment comprises a semiconductor layer, a variable resistance layer, a sidewall layer, and a buried layer. The semiconductor layer functions as a rectifying device. The variable resistance layer is provided above or below the semiconductor layer and reversibly changes its resistance. The sidewall layer is in contact with a sidewall of the semiconductor layer. The buried layer is embedded in the sidewall layer and is made of material different from that of the sidewall layer. These configurations may adjust the electrical characteristics of the rectifying device to any value.

主权项

1. A semiconductor memory device comprising:
a semiconductor layer functioning as a rectifying device; a variable resistance layer provided above or below the semiconductor layer, and reversibly changing its resistance; a sidewall layer physically contacting a sidewall of the semiconductor layer and the variable resistance layer; and a buried layer embedded in the sidewall layer, and being made of material different from that of the sidewall layer, wherein the sidewall layer comprises: a sidewall semiconductor layer contacting a sidewall of the semiconductor layer, the sidewall semiconductor layer being different from the semiconductor layer; and a sidewall insulating layer provided on a side surface of the sidewall semiconductor layer via the buried layer, wherein the buried layer is continuously formed to cover the semiconductor layer and the variable resistance layer.