Epitaxial devices

摘要

Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

主权项

1. A light emitting diode, comprising:
a silicon substrate; one or more angled surfaces formed on the silicon substrate; epitaxial gallium nitride formed on the one or more angled surfaces; and a P-N junction located in the epitaxial gallium nitride to provide light as electrons combine with holes across the P-N junction.