Field programmable gate arrays using resistivity-sensitive memories

摘要

Field programmable gate arrays using resistivity-sensitive memories are described, including a programmable cell comprising a configurable logic, a memory connected to the configurable logic to provide functions for the configurable logic, the memory comprises a non-volatile rewriteable memory element including a resistivity-sensitive memory element, an input/output logic connected to the configurable logic and the memory to communicate with other cells. The memory elements may be two-terminal resistivity-sensitive memory elements that store data in the absence of power. The two-terminal memory elements may store data as plurality of conductivity profiles that can be non-destructively read by applying a read voltage across the terminals of the memory element and data can be written to the two-terminal memory elements by applying a write voltage across the terminals. The memory can be vertically configured in one or more memory planes that are vertically stacked upon each other and are positioned above a logic plane.

主权项

1. A field programmable gate array (FPGA) comprising:
a first configurable logic block formed in a substrate; a first memory formed in at least one memory layer overlying the substrate and connected with the first configurable logic block, the first memory comprising non-volatile resistive memory elements, the first memory providing signals to drive the first configurable logic block; and an interface connected with the first memory and operative to provide write data to the first memory; a second configurable logic block formed in the substrate and a second memory formed in the at least one memory layer overlying the substrate, the second memory connected with the second configurable logic block, the second memory providing signals to drive the second configurable logic block, and wherein the interface further connects with the second memory and is operative to provide write data to the second memory; and a third memory formed overlying the substrate and comprising non-volatile resistive memory elements, the third memory providing data accessible to both the first and second configurable logic blocks.