发明名称 Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus
摘要 The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.
申请公布号 US9111828(B2) 申请公布日期 2015.08.18
申请号 US201414228648 申请日期 2014.03.28
申请人 Sony Corporation 发明人 Maeda Kensaku;Matsugai Hiroyasu;Moriya Yusuke
分类号 H01L31/0232;H01L27/146 主分类号 H01L31/0232
代理机构 Fishman Stewart Yamaguchi PLLC 代理人 Fishman Stewart Yamaguchi PLLC
主权项 1. A solid-state imaging device comprising: a layer of microlenses, said microlenses being an inorganic material; a planarizing layer, said planarizing layer being an organic material; a stress relaxation layer between said planarizing layer and said layer of the microlenses, said microlenses and said planarizing layer touching said stress relaxation layer, wherein said stress relaxation layer is a plurality of stress relaxation layers made of different materials.
地址 Tokyo JP