发明名称 Process for preparing trialkylgallium compounds
摘要 The invention relates to a process for preparing trialkylgallium compounds of the general formula R3Ga. The process is based on the reaction of gallium trichloride (GaCh), optionally in a mixture with partially alkylated products, with an alkylaluminium compound of the type RaAICIb (where R═C1-C5-alkyl, a=1, 2 or 3, b=0, 1 or 2 and a+b=3) in the presence of at least two alkali metal halides (e.g. NaCI and KCI) as auxiliary base. Preference is given to using alkylaluminium sesquichloride (R3AI2CI3) or trialkylaluminium (R3AI). The reaction mixture is heated to a temperature in the range from 120° C. to 250° C. and the trialkylgallium compound formed is separated off via a separator which is operated at a temperature which is more than 30° C. below the boiling point of the most volatile partially alkylated product. Complete alkylation is achieved here and partially alkylated products are recirculated to the reaction mixture. In a further step, the reaction mixture can be heated to a maximum of 350° C. and the remaining fully alkylated and partially alkylated products can be separated off. The process provides a high yield of trialkylgallium compound and displays high gallium utilization; the products are used, e.g., as precursors for MOCVD processes.
申请公布号 US9108985(B2) 申请公布日期 2015.08.18
申请号 US201213261859 申请日期 2012.11.28
申请人 UMICORE AG & CO, KG 发明人 Karch Ralf;Rivas-Nass Andreas;Frey Annika;Burkert Tobias;Woerner Eileen;Doppiu Angelino
分类号 C07F5/00;C23C16/30;C23C16/18 主分类号 C07F5/00
代理机构 Smith, Gambrell & Russell, LLP 代理人 Smith, Gambrell & Russell, LLP
主权项 1. Process for preparing trialkylgallium compounds of the general formula R3Ga where R is a C1-C5-alkyl group, which comprises the steps: a) reaction of gallium trichloride (GaCl3) with an alkylaluminium compound of the type RaAlClb (where R is a C1-C5-alkyl group, a=1, 2 or 3, b=0, 1 or 2 and the sum a+b=3) in the presence of at least two alkali metal halides as auxiliary base; b) heating of the reaction mixture to a temperature in the range from 120 to 250° C. with simultaneous separation of the trialkylgallium compound (R3Ga) formed from the reaction mixture via a separator, where the separator is operated at a temperature which is more than 30° C. below the boiling point of the most volatile partially alkylated product of the type RcGaCld (where R is a C1-C5-alkyl group, c, d=1 or 2 and c+d=3) formed in the reaction mixture.
地址 Hanau-Wolfgang DE