发明名称 SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD
摘要 A substrate liquid treatment apparatus comprises a chuck (13) that holds and rotates a wafer, a back surface purging nozzle (15) that discharges a purge gas toward the back surface of the wafer, and a periphery purging nozzle 16 that discharges the purge gas onto the back surface of the wafer. The back surface purging nozzle has a slit-like opening part extending from a central side to a peripheral side of the substrate in a plan view. Vertical distance between the slit-like opening part and the substrate held by the substrate holding unit increases as approaching an end of the opening part on the central side of the substrate. The periphery purging nozzle discharges the purge gas, toward a central part of the substrate, toward a region on the back surface of the substrate, which region is located radially outside an end of the slit-like opening part of the back surface purging nozzle and radially inside an peripheral edge of the substrate.
申请公布号 KR20150093699(A) 申请公布日期 2015.08.18
申请号 KR20157015401 申请日期 2013.12.12
申请人 TOKYO ELECTRON LIMITED 发明人 FUKUDA MASAHIRO;KUBO AKIHIRO;YAMAMOTO TARO;YADA KENZI;OOKOUCHI ATSUSHI
分类号 H01L21/027;H01L21/02;H01L21/304;H01L21/67;H01L21/683 主分类号 H01L21/027
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