PLASMA METHOD FOR REDUCING POST-LITHOGRAPHY LINE WIDTH ROUGHNESS

摘要

The present invention relates to a method for processing a photoresist structure on a substrate. The method for processing a photoresist structure on a substrate comprises: a step of fabricating one or more resist structures on the substrate; a step of introducing the substrate into a plasma reactor; and a step of performing a plasma process on the substrate at a temperature lower than 0°C (preferably, between 0°C and -100°C). The plasma process is preferably an H_2 plasma process performed in an inductively coupled plasma reactor. A processing time period is preferably at least 30 seconds.