| 摘要 |
<p>The present invention relates to a silicon carbide MOSFET. A device according to the present invention includes an epitaxy layer which is formed on an SiC substrate, a first welling region which is formed on a part of the epitaxy layer and has a first doping concentration, a second well region which is formed on the other part of the epitaxy layer and has a second doping concentration, a doping region which is formed on the upper side of the first well region, a gate oxide layer which is formed on the second well region and the epitaxy layer, a top metal layer which is formed on each of the gate oxide layer and the doping region, and a bottom metal layer which is formed on the rear side of the SiC substrate. According to the present invention, the breakdown voltage and the threshold voltage of the silicon carbide MOSFET are simultaneously improved by using the well region of a dual structure with different doping concentrations.</p> |
