发明名称 |
Ion beam device and machining method |
摘要 |
Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation. |
申请公布号 |
US9111721(B2) |
申请公布日期 |
2015.08.18 |
申请号 |
US201214002137 |
申请日期 |
2012.01.13 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
Kitayama Shinya;Tomimatsu Satoshi;Onishi Tsuyoshi |
分类号 |
H01J37/20;H01J37/317;H01J37/22 |
主分类号 |
H01J37/20 |
代理机构 |
Baker Botts L.L.P. |
代理人 |
Baker Botts L.L.P. |
主权项 |
1. An ion beam device comprising:
an ion beam optical system configured to irradiate a machining target with an on beam; an absorption current detection device configured to detect an absorption current that flows through the machining target due to the ion beam irradiation; a central processing unit configured to control the ion beam optical system; a shape generation processing unit configured to obtain an image of the machining target on the basis of a scanning signal of the ion beam and the absorption current of the machining target; a machining pattern positioning processing unit configured to position a machining pattern over the image of the machining target obtained by the shape generation processing unit; and an ion beam stopping processing unit configured to stop the ion beam irradiation from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation. |
地址 |
Tokyo JP |