Metal heterocyclic compounds for deposition of thin films

摘要

Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.

主权项

1. A method of forming a metal containing film on a substrate, comprising:
a) providing a reactor and at least one substrate disposed therein; b) introducing a metal precursor into the reactor, wherein the metal precursor is selected from the group consisting of: Te(CH3NCHCHNCH3); Te(C2H5NCHCHNC2H5); Te(NCH(CH3)CHCHNCH(CH3)2); Te(NC(CH3)3CHCHNC(CH3)3); Te(NC(CH3)3C(CH3)C(CH3)NC(CH3)3); Ti(CH3NCHCHNCH3); Ti(C2H5NCHCHNC2H); Ti(NCH(CH3)2CHCHNCH(CH3)2); Ti(NC(CH3)3NCHCHNC(CH3)3); Ti(NC(CH3)3NC(CH3)C(CH3)NC(CH3)3); Si(CH3NCHCHNCH3); Si(C2H5NCHCHNC2H5); Si(NCH(CH3)2CHCHNCH(CH3)2); Si(NC(CH3)3CHCHNC(CH3)3); Si(NC(CH3)3NC(CH3)C(CH3)NC(CH3)3); Sn(NCH3NCHCHNCH3); Sn(C2H5NCHCHNC2H5); Sn(NCH(CH3)2CHCHNCH(CH3)2); Sn(NC(CH3)3CHCHNC(CH3)3); Sn(NC(CH3)3C(CH3)C(CH3)NC(CH3)3); Sb(N(CH3)CHCHN(CH3))(N(CH3)2); Sb(N(CH3)CHCHN(CH3))(CH3); Sb(N(CH3)CHCHN(CH3)(C2H5); Sb(NC(CH3)3CHCHNC(CH3)3)(N(CH3)2); Sb(NC(CH3)3CHCHNC(CH3)3)(CH3); Sb(NC(CH3)3CHCHNC(CH3)3)(C2H5); Ru(NC(CH3)3CHCHNC(CH3)3)(C5H5); Ti(NC(CH3)3CHCHNC(CH3)3)(N(CH3)2)2; Si(NC(CH3)3CHCHNC(CH3)3)(N(CH3)2)2; Sn(NC(CH3)3CHCHN(C(CH3)3)(N(CH3)2)2; Ti(N(C(CH3)3)CHCHN(C(CH3)3)(CH3)2; Si(N(C(CH3)3)CHCHN(C(CH3)3)(CH3)2; Ti(N(C(CH3)3)CHCHN(C(CH3)3)(C2H5)2; Si(N(C(CH3)3)CHCHN(C(CH3)3)(C2H5)2; Si(N(C(CH3)3)CHCHN(C(CH3)3)(C2H5)2; Ru(NC(CH3)3CHCHN(C(CH3)3)(iPrNC(CH3)NiPr)2; Fe(N(C(CH3)3)CHCHN(C(CH3)3)(iPrNC(CH3)NiPr)2; Os(N(C(CH3)3)CHCHN(C(CH3)3)(iPrNC(CH3)NiPr)2; Ta(NC(CH3)3CHCHNC(CH3)3)(NMe2)3; Ta(NC(CH3)3CHCHNC(CH3)3)(CH3)3; Ta(NC(CH3)3CHCHNC(CH3)3)(C2H5)3; Nb(NC(CH3)3CHCHCNC(CH3)3)(NMe2)3; Nb(NC(CH3)3CHCHNC(CH3)3)(CH3)3; and Nb(NC(CH3)3CHCHNC(CH3)3)(C2H5)3; c) maintaining the reactor at a temperature of at least about 100° C.; and d) decomposing the metal precursor onto the substrate to form a metal containing film.