发明名称 Method for temperature stabilization, X-ray detector and CT system
摘要 A method is disclosed for the temperature stabilization of a direct-converting X-ray detector, including a detector surface having a semiconductor and being divided into a plurality of partial detector surfaces. During the irradiation of the detector surface, heat is generated in the semiconductor by electric power. Electric power generated in the semiconductor is kept constant for each partial detector surface at least during a heterogeneous and/or temporally variable irradiation of the detector surface by feeding-in power-adjusted additional radiation for each partial detector surface. A direct-converting X-ray detector is disclosed for the detection of X-rays. At least one control loop with at least one reference variable is embodied for the energy regulation of the additional radiation, which keeps the temperature in the semiconductor constant for each partial detector surface by keeping the electric power in the semiconductor constant by changing the energy of the additional radiation. A CT system is disclosed.
申请公布号 US9113542(B2) 申请公布日期 2015.08.18
申请号 US201313949378 申请日期 2013.07.24
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 Hackenschmied Peter;Schröter Christian
分类号 H05G1/30;G01T1/24 主分类号 H05G1/30
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A method for the temperature stabilization of a direct-converting X-ray detector including a detector surface, the detector surface including a semiconductor and being divided into a plurality of partial detector surfaces, wherein during irradiation of the detector surface, heat is generated in the semiconductor by electric power, the method comprising: keeping electric power generated in the semiconductor constant for each partial detector surface, at least during heterogeneous and/or temporally variable irradiation of the detector surface, by feeding-in power-adjusted radiation for each partial detector surface.
地址 Munich DE