| 发明名称 | Light-emitting device manufacturing method | ||
| 摘要 | A method for manufacturing a light-emitting device, comprises steps of: providing an as-cut wafer having an irregularly uneven surface comprising surface roughness greater than 0.5 μm; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer. | ||
| 申请公布号 | US9112101(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201313870008 | 申请日期 | 2013.04.25 |
| 申请人 | Epistar Corporation | 发明人 | Guo Yi-Lin;Ou Chen;Lee Chi-Ling;Wang Wei-Han;Shen Hui-Tang;Wu Chi-Hung;Yang Hung-Chih |
| 分类号 | H01L33/00;H01L21/76;H01L33/32;H01L33/22;H01L33/12 | 主分类号 | H01L33/00 |
| 代理机构 | Bacon & Thomas, PLLC | 代理人 | Bacon & Thomas, PLLC |
| 主权项 | 1. A method for manufacturing a light-emitting device, comprising steps of: providing an as-cut wafer devoid of a patterning process and having an irregularly uneven surface comprising surface roughness greater than 0.5 μm; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer. | ||
| 地址 | Hsinchu TW | ||