发明名称 System and method for temperature control of a semiconductor wafer
摘要 A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.
申请公布号 US9111971(B2) 申请公布日期 2015.08.18
申请号 US201213562238 申请日期 2012.07.30
申请人 APPLIED MATERIALS ISRAEL, LTD. 发明人 Shavit Lavy;Kraus Rafi;Yair Itzak;Nackash Samuel;Belenky Yuri
分类号 H01L21/67;F27D13/00;F27B5/18;F27B17/00 主分类号 H01L21/67
代理机构 Kilpatrick Townsend & Stockton LLP 代理人 Kilpatrick Townsend & Stockton LLP
主权项 1. A method, comprising: receiving a semiconductor wafer at a first chamber when the first chamber is at a first pressure level and the semiconductor wafer is at a first temperature; sensing a temperature of the semiconductor wafer, a wafer cassette or an ambient temperature with at least one temperature sensor; heating the semiconductor wafer, by one of a first or a second heating module, to a second temperature and reducing the pressure level of the first chamber to a second pressure level; and providing the semiconductor wafer to a supporting element of a second chamber, wherein the second chamber maintains a third pressure level that is closer to the second pressure level than to the first pressure level and the supporting element is at a third temperature that is closer to the second temperature than to the first temperature; wherein the first heating module has a central aperture that surrounds a pre-aligner configured to align the wafer to a desired location and/or orientation while in the first chamber; and wherein a heating controller is coupled to the first and second heating modules and the at least one temperature sensor, wherein the heating controller receives temperature readings of the at least one temperature sensor, determines a temperature difference between the temperature readings and a second, predetermined temperature, and activates the first heating module if the temperature difference is less than a predetermined value and alternatively activates the second heating module if the temperature difference is greater than the predetermined value.
地址 Rehovot IL