Non-volatile semiconductor memory device and method for manufacturing the same

摘要

A non-volatile semiconductor memory device includes a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, wherein the memory cell includes a current rectifying element and a variable resistance element, and an atomic composition ratio of nitrogen is higher than that of oxygen in a part of a sidewall of the current rectifying element.

主权项

1. A non-volatile semiconductor memory device comprising a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, wherein
the memory cell includes a current rectifying element and a variable resistance element, the current rectifying element is connected to the first wire via a first electrode, the variable resistance element is connected to the current rectifying element via a second electrode and is connected to the second wire via a third electrode, the current rectifying element, the variable resistance element, and the first to third electrodes are each provided with a sidewall nitrided layer on a side surface thereof, each sidewall nitrided layer provided on the side surface of the respective current rectifying element, the variable resistance element, and the first to third electrodes includes nitrogen and an atom included by the respective current rectifying element, the variable resistance element, and the first to third electrodes, and an atomic composition ratio of nitrogen is higher than that of oxygen in a part of a sidewall of the current rectifying element.