Power semiconductor device and fabrication method thereof

摘要

A power semiconductor device includes a cell region on a semiconductor substrate, at least a transistor device in the cell region, a peripheral termination region encompassing the cell region, a plurality of epitaxial islands arranged around the cell region, and a grid type epitaxial layer in the peripheral termination region. The grid type epitaxial layer separates the plurality of epitaxial islands from one another.

主权项

1. A power semiconductor device, comprising:
a cell region on a semiconductor substrate; at least one transistor device disposed in the cell region; a peripheral termination region surrounding the cell region; a transition region interposed between the cell region and the peripheral termination region; a guard ring doping region in the transition region; a gate structure disposed on the guard ring doping region; a field oxide layer on the peripheral termination region; a field plate on the field oxide layer; a plurality of islands of first epitaxial layer disposed in the peripheral termination region; and a grid-shaped second epitaxial layer in the peripheral termination region, the grid-shaped second epitaxial layer surrounds each of the plurality of islands of first epitaxial layer to thereby separate the plurality of islands of first epitaxial layer from one another.