发明名称 Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof
摘要 Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a source region of the first conductivity type, and the diode circuit is connected between the isolation structure and the source region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).
申请公布号 US9111767(B2) 申请公布日期 2015.08.18
申请号 US201213538565 申请日期 2012.06.29
申请人 Freescale Semiconductor, Inc. 发明人 Chen Weize;Bode Hubert M.;De Souza Richard J.;Parris Patrice M.
分类号 H01L27/088;H01L21/02;H01L27/06;H01L29/861;H01L29/872 主分类号 H01L27/088
代理机构 代理人 Schumm Sherry W.
主权项 1. A semiconductor device, comprising: a semiconductor substrate having a first conductivity type and a top substrate surface; a buried layer below the top substrate surface, wherein the buried layer has a second conductivity type that is different from the first conductivity type; a sinker region between the top substrate surface and the buried layer, wherein the sinker region has the second conductivity type, and an isolation structure is formed by the sinker region and the buried layer; an active device in a portion of the semiconductor substrate contained by the isolation structure, wherein the active device includes a body region of the second conductivity type extending from the top substrate surface to a first depth;a source region of the first conductivity type formed in the body region,a drift region of the first conductivity type within a central portion of the active area, anda drain region of the first conductivity type formed in the drift region; and a diode circuit connected between the isolation structure and the source region.
地址 Austin TX US