Smart charge pump configuration for non-volatile memories

摘要

A semiconductor memory device includes a non-volatile memory, a memory controller, and a charge pump system. The memory controller establishes first parameters for a first programming cycle of a first plurality of memory cells of the non-volatile memory prior to the first programming cycle being performed. The charge pump system includes a plurality of charge pumps and provides a first programming pulse for use in performing the first program cycle. The first programming pulse is provided by selecting, according to the first parameters, which of the plurality of charge pumps are to be enabled during the first program cycle and which are to be disabled during the first program cycle.

主权项

1. A semiconductor device comprising:
a non-volatile memory; a memory controller for establishing first parameters for a first programming cycle of a first plurality of memory cells of the non-volatile memory prior to the first programming cycle being performed; a charge pump system that comprises a plurality of charge pumps and provides a first programming pulse for use in performing the first program cycle, wherein the first programming pulse is provided by selecting, according to the first parameters, which of the plurality of charge pumps are to be enabled during the first program cycle and which are to be disabled during the first program cycle; and the memory controller establishes second parameters for a second programming cycle for memory cells unsuccessfully programmed during the first programming cycle, the charge pump provides a second programming pulse for the second programming cycle, the second programming pulse is provided by selecting, according to the second parameters, which of the plurality of charge pumps are to be disabled during the second program cycle.