Multi-die DRAM banks arrangement and wiring

摘要

A memory die for use in a multi-die stack having at least one other die. The memory die includes a plurality of contacts arranged in a field and configured to interface to the other dies of the multi-die stack. A first subset of the buffer lines of a number of buffer lines are connected to respective contacts in the field. The memory die also includes a number of buffers and cross-bar lines. The buffers are coupled between respective signal lines and respective buffer lines. The cross-bar lines interconnect respective pairs of buffer lines in a second subset of the buffer lines that is distinct from the first subset of the buffer lines.

主权项

1. A memory die for use in a multi-die stack having at least one other die, comprising:
a plurality of memory banks, each having a plurality of signal lines; a plurality of contacts arranged in a field, the contacts configured to interface to the at least one other die of the multi-die stack; buffer lines, including a first subset of buffer lines and a second subset of buffer lines, the first subset of buffer lines being connected to respective contacts in the field; a plurality of buffers, each buffer of the plurality of buffers having a first terminal coupled to a respective signal line, a second terminal coupled to another buffer of the plurality of buffers, and a third terminal coupled to a respective buffer line; and a plurality of cross-bar lines interconnecting respective pairs of buffer lines in the second subset of buffer lines.