Resistance-variable memory device

摘要

A memory device includes a first electrode, a second electrode, a third electrode, a first variable resistance layer between the first electrode and the third electrode, and a second variable resistance layer between the second electrode and the third electrode. The first, second, and third electrodes, and the first and second variable resistance layers are formed of materials that cause the first variable resistance layer to transition from a high resistance state to a low resistance state when a voltage is applied across the first and second electrodes and maintain the high resistance state when the voltage is cut off, and cause the second variable resistance layer to transition from a high resistance state to a low resistance state when the voltage is applied across the first and second electrodes and transition from the high resistance state to the low resistance state when the voltage is cut off.

主权项

1. A resistance-variable memory device, comprising:
a first electrode, second electrode and third electrode; a first variable resistance layer disposed between the first electrode and the third electrode; and a second variable resistance layer disposed between the second electrode and the third electrode, wherein the first electrode, the second electrode, the third electrode, the first variable resistance layer, and the second variable resistance layer are formed of materials that cause the first variable resistance layer to transition from a first resistance state to a second resistance state when a differential voltage is applied across the first and second electrodes and maintain the second resistance state when the differential voltage is cut off, and cause the second variable resistance layer to transition from a third resistance state to a fourth resistance state when the differential voltage is applied across the first and second electrodes and transition from the fourth resistance state to the third resistance state when the differential voltage is cut off, and wherein the material for the first variable resistance layer provides greater resistance against current flowing from the first electrode to the third electrode when in the first resistance state than when in the second resistance state, and the second variable resistance layer provides greater resistance against current flowing from the third electrode to the second electrode when in the third resistance state than when in the fourth resistance state.