发明名称 |
Thin-film semiconductor device and method of manufacturing the same |
摘要 |
A thin-film semiconductor device manufacturing method according to the present disclosure includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating film above the substrate; forming an amorphous film (amorphous silicon film) above the substrate; forming a crystalline film (crystalline silicon film) including a first crystal and a second crystal, by crystallizing the amorphous film, the first crystal (i) containing subgrains formed with different crystal orientations in a single crystal and (ii) including a subgrain boundary formed by plural crystal planes between the subgrains, the second crystal having an average crystal grain size smaller than an average crystal grain size of the first crystal; thinning the crystalline film; and forming a source electrode and a drain electrode above the substrate. |
申请公布号 |
US9112034(B2) |
申请公布日期 |
2015.08.18 |
申请号 |
US201313918011 |
申请日期 |
2013.06.14 |
申请人 |
PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.;JOLED INC. |
发明人 |
Ootaka Sei;Yoshioka Hiroshi;Kawashima Takahiro;Nishitani Hikaru |
分类号 |
H01L29/04;H01L29/10;H01L31/00;H01L29/786;H01L29/66;H01L27/12 |
主分类号 |
H01L29/04 |
代理机构 |
Greenblum & Bernstein, P.L.C. |
代理人 |
Greenblum & Bernstein, P.L.C. |
主权项 |
1. A thin-film semiconductor device manufacturing method comprising:
preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating film above the substrate; forming an amorphous film above the substrate; forming a crystalline film including a first crystal and a second crystal, by crystallizing the amorphous film, the first crystal (i) containing subgrains formed with different crystal orientations in a single crystal and (ii) including a subgrain boundary formed by plural crystal planes between the subgrains, the second crystal having an average crystal grain size smaller than an average crystal grain size of the first crystal; thinning the crystalline film; and forming a source electrode and a drain electrode above the substrate. |
地址 |
Hyogo JP |