High voltage bipolar transistor with trench field plate

摘要

A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced apart from the epitaxial layer by an insulating material. The bipolar transistor structure further includes a base contact connected to a base of the bipolar transistor device, an emitter contact connected to an emitter of the bipolar transistor device and isolated from the base contact and an electrical connection between the emitter contact and the field plate.

主权项

1. A method of manufacturing a bipolar transistor structure, comprising:
forming an epitaxial layer on a semiconductor substrate; forming a bipolar transistor device in the epitaxial layer, the bipolar transistor device comprising a base in the epitaxial layer, a collector including a portion of the epitaxial layer between the substrate and the base, and an emitter in the epitaxial layer adjacent the base so that the base is interposed between the collector and the emitter in a direction perpendicular to a main surface of the substrate; forming a trench structure in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device, the trench structure including a field plate spaced apart from the epitaxial layer by an insulating material; connecting a base contact to a base of the bipolar transistor device; and connecting an emitter contact to an emitter of the bipolar transistor device so that the emitter contact and the base contact are isolated from one another.