Transistor with counter-electrode connection amalgamated with the source/drain contact

摘要

The field effect device includes an active area made from semi-conducting material and a gate electrode separated from the active area by a dielectric gate material. A counter-electrode is separated from the active area by a layer of electrically insulating material. Two source/drain contacts are arranged on the active area on each side of the gate electrode. One of the source/drain contacts is made from a single material, overspills from the active area and connects the active area with the counter-electrode. The counter-electrode contact is delineated by a closed peripheral insulating pattern.

主权项

1. Field effect device comprising:
an active area made from semi-conducting material; a gate electrode, a counter-electrode separated from the active area by a layer of electrically insulating material, two source/drain contacts arranged on the active area, and a closed insulating pattern surrounds the active area and the counter-electrode contact,
wherein one of the source/drain contacts is made from a single material, overspills from the active area and connects the active area with the counter-electrode to form the counter-electrode contact,the insulating pattern has a complementary shape to the active area and the counter-electrode contact,the insulating pattern extends down into the layer of electrically insulating material and into a support substrate over a greater depth than that of the counter-electrode, andthe counter-electrode contact presents an interface with the active area and with the side wall of the counter-electrode.