| 发明名称 | Gas exhaust for high volume, low cost system for epitaxial silicon deposition | ||
| 摘要 | Apparatus for the removal of exhaust gases are provided herein. In some embodiments, an apparatus may include a carrier for supporting one or more substrates in a substrate processing tool, the carrier having a first exhaust outlet, and an exhaust assembly including a first inlet disposed proximate the carrier to receive process exhaust from the first exhaust outlet of the carrier, a second inlet to receive a cleaning gas, and an outlet to remove the process exhaust and the cleaning gas. | ||
| 申请公布号 | US9111980(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201213721311 | 申请日期 | 2012.12.20 |
| 申请人 | APPLIED MATERIALS, INC. | 发明人 | Carlson David K.;Rice Michael R.;Shah Kartik B.;Maqsood Kashif;Narwankar Pravin K. |
| 分类号 | C23C16/00;H01L21/683;B05B1/00;C30B25/14;C30B25/08;E05F1/00;H01L21/67;H01L21/677;C30B29/06 | 主分类号 | C23C16/00 |
| 代理机构 | Moser Taboada | 代理人 | Moser Taboada ;Linardakis Len |
| 主权项 | 1. Apparatus for processing a substrate, comprising: a carrier for supporting one or more substrates in a substrate processing tool, the carrier having a first exhaust outlet; and an exhaust assembly comprising: a first inlet disposed proximate the carrier to receive process exhaust from the first exhaust outlet of the carrier;a second inlet to receive a cleaning gas; andan outlet, disposed below the first inlet, to remove the process exhaust and the cleaning gas. | ||
| 地址 | Santa Clara CA US | ||