Semiconductor device and manufacture method thereof

摘要

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a well region disposed in a substrate, a gate disposed on the substrate, a halo region disposed in a channel region under the gate, and a source LDD region and a drain LDD region disposed on opposite sides of the halo region.

主权项

1. A semiconductor device, comprising:
a well region disposed in a substrate; a gate disposed on the substrate; a halo region disposed in a channel region under the gate; and a source LDD region and a drain LDD region disposed on opposite sides of the halo region, wherein the halo region is spaced apart from the source LDD region and the drain LDD region, and is disposed substantially at a center of the channel region under the gate.