| 发明名称 | Rectifier structures with low leakage | ||
| 摘要 | An integrated circuit device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a gate dielectric over the second III-V compound layer, and a gate electrode over the gate dielectric. An anode electrode and a cathode electrode are formed on opposite sides of the gate electrode. The anode electrode is electrically connected to the gate electrode. The anode electrode, the cathode electrode, and the gate electrode form portions of a rectifier. | ||
| 申请公布号 | US9111956(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201314144716 | 申请日期 | 2013.12.31 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wong King-Yuen;Yu Chen-Ju;Yu Jiun-Lei Jerry;Chen Po-Chih;Yao Fu-Wei;Yang Fu-Chih |
| 分类号 | H01L21/82;H01L29/66;H01L29/778;H01L21/8252;H01L27/06;H01L29/20 | 主分类号 | H01L21/82 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. An integrated circuit device comprising: a first III-V compound layer; a second III-V compound layer over the first III-V compound layer, wherein the second III-V compound layer comprises: a first portion doped with negatively charged ions; andsecond portions on opposite sides of the first portion; a gate dielectric over the second III-V compound layer; a gate electrode over the gate dielectric; and an anode electrode and a cathode electrode on opposite sides of the gate electrode, wherein the anode electrode is electrically connected to the gate electrode, and wherein the anode electrode, the cathode electrode, and the gate electrode form portions of a rectifier. | ||
| 地址 | Hsin-Chu TW | ||