| 发明名称 | Base for a NPN bipolar transistor | ||
| 摘要 | An improved base for a NPN bipolar transistor. The base region is formed with Boron and Indium dopants for improved beta early voltage product and reduced base resistance. | ||
| 申请公布号 | US9111955(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201012697858 | 申请日期 | 2010.02.01 |
| 申请人 | Intersil Americas Inc. | 发明人 | Beasom James D. |
| 分类号 | H01L21/331;H01L29/66;H01L29/10;H01L29/167;H01L29/732;H01L29/735 | 主分类号 | H01L21/331 |
| 代理机构 | Fogg & Powers LLC | 代理人 | Fogg & Powers LLC |
| 主权项 | 1. A method of forming a base region in an NPN transistor, the method comprising: diffusing Boron dopants through a select region of a working surface of a substrate; and implanting Indium dopants through the select region of the working surface of the substrate, wherein the concentration of the Indium dopants is greater than the concentration of the Boron dopants at a base-collector junction. | ||
| 地址 | Milpitas CA US | ||