发明名称 Process for enhanced 3D integration and structures generated using the same
摘要 An enhanced 3D integration structure comprises a logic microprocessor chip bonded to a collection of vertically stacked memory slices and an optional set of outer vertical slices comprising optoelectronic devices. Such a device enables both high memory content in close proximity to the logic circuits and a high bandwidth for logic to memory communication. Additionally, the provision of optoelectronic devices in the outer slices of the vertical slice stack enables high bandwidth direct communication between logic processor chips on adjacent enhanced 3D modules mounted next to each other or on adjacent packaging substrates. A method to fabricate such structures comprises using a template assembly which enables wafer format processing of vertical slice stacks.
申请公布号 US9111925(B2) 申请公布日期 2015.08.18
申请号 US201313974983 申请日期 2013.08.23
申请人 International Business Machines Corporation 发明人 Colgan Evan George;Purushothaman SAmpath;Yu Roy R.
分类号 H01L23/02;H01L23/12;H01L27/146;H01L23/498;B23P11/00;H05K1/11;H05K1/14;H05K7/00;H01L21/78 主分类号 H01L23/02
代理机构 The Law Offices of Robert J. Eichelburg 代理人 Eichelburg Robert J.;The Law Offices of Robert J. Eichelburg
主权项 1. A 4DI structure comprising a first substrate placed in a horizontal orientation and attached to an assembly comprising a set of two or more second substrates bonded to each other and placed in a vertical orientation beneath said first substrate where there is an area array of electrical contacts between said first substrate and said second substrates and said area array of electrical contacts is formed by means of corner connections to wiring on the face of said set of second substrates, so that said corner connections electrically connect said second substrates.
地址 Armonk NY US