发明名称 Flip-chip hybridization of microelectronic components by local heating of connecting elements
摘要 A method of forming a hybridized device including forming a first component provided with metal bumps, and a second component provided with connection elements, attaching the bumps to the connection elements. The manufacturing of the second component includes forming, on a surface of a substrate, resistive elements at the locations provided for the connection elements; depositing an electric insulator layer at least on the resistive elements; and forming the connection elements, each comprising a metal well having an opening capable of receiving the corresponding metal bump of the first microelectronic component and at least partially filled with a fusible element, particularly indium or an alloy of tin and gold, or with a conductive ink, particularly based on silver or copper. Further, the attachment of the balls to the connection elements comprises applying an electric current through the resistive elements to heat the bumps.
申请公布号 US9111924(B2) 申请公布日期 2015.08.18
申请号 US201414225963 申请日期 2014.03.26
申请人 Commissariat A L'Energie Atomique Et Aux Energies Alternatives 发明人 Aliane Abdelkader
分类号 H01L21/44;H01L23/528;H01L23/498;H01L23/34;H01L23/00;H01L21/768 主分类号 H01L21/44
代理机构 Burr & Brown, PLLC 代理人 Burr & Brown, PLLC
主权项 1. A method of forming a hybridized device comprising: forming a first microelectronic component provided on a surface with metal bumps, and a second microelectronic component provided on a surface with connection elements corresponding to said metal bumps; placing the bumps of the first microelectronic component into contact with the connection elements of the second micro-electronic component; and attaching the bumps to the connection elements;wherein the manufacturing of the second microelectronic component comprises: forming a substrate; forming, on a surface of the substrate, resistive elements at the locations provided for the connection elements; depositing an electric insulator layer at least on the resistive elements, the electric insulator layer being made of an electrically insulating material; and forming the connection elements, each comprising a metal well having an opening capable of receiving the corresponding metal bump of the first microelectronic component and at least partially filled with a fusible element, particularly indium or an alloy of tin and gold, or with a conductive ink, particularly based on silver or copper;wherein the attachment of the balls to the connection elements comprises applying an electric current through the resistive elements to heat the bumps;and wherein the manufacturing of the metal wells comprises: forming metal areas on the electric insulator layer at the locations provided for the connection elements, the metal areas being made of a metallic material having a greater thermal expansion coefficient than a thermal expansion coefficient of the electrically insulating material of the electric insulator layer; and cutting with a laser an opening in each of said metal areas.
地址 Paris FR