Pattern formation method

摘要

According to one embodiment, a pattern formation method includes forming a layer above an underlying layer. The layer includes a block copolymer. The method further includes forming a first phase including a first polymer and a second phase including a second polymer in the layer by phase-separating the block copolymer, and selectively removing the first phase by dry etching the layer using an etching gas including carbon monoxide.

主权项

1. A pattern formation method comprising:
forming a layer above an underlying layer, the layer including a block copolymer; forming a first phase including a first polymer and a second phase including a second polymer in the layer by phase-separating the block copolymer, the first polymer including no benzene ring in a chemical formula thereof, and the second polymer including a benzene ring in a chemical formula thereof; and selectively removing the first phase by dry etching the layer using an etching gas including carbon monoxide and hydrogen, wherein a flow rate ratio of the carbon monoxide to a total amount of the hydrogen and the carbon monoxide is 40% or more.